Split gate
Author: f | 2025-04-25
Brower Timing System TC-Gate (photocell gates for start, split or finish)- These Gates create an infrared beam that can start, split or stop the time. With the TC-System users Brower Timing System TC-Gate (photocell gates for start, split or finish). These Gates create an infrared beam that can start, split or stop the time. With Brower Timing's dedication to
Split-Gate CSTBT for Suppression of Negative Gate
Author / Affiliation / Email Article Menu Font Type: Arial Georgia Verdana Open AccessArticle by Hao Liu, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu and Longxing Shi * National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 211189, China * Author to whom correspondence should be addressed. Submission received: 30 April 2023 / Revised: 24 May 2023 / Accepted: 1 June 2023 / Published: 5 June 2023 Abstract: In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated with the same design rules and process platform. Therefore, the structures have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold voltage (Vth), and body diode forward voltage (VSD). It is shown that the Ciss/Coss/Crss capacitances of the SG-MOSFET can be reduced by 7%/8%/17%, respectively, compared with PG-MOSFET. It is also shown that the SG-MOSFET has the potential to reduce switching losses without compromising the static performance. Moreover, it maintains the robustness of the device, and an optimized layout design with spaced holes in the gate poly is adopted. Therefore, there is no obvious degradation between the SG-MOSFET and the PG-MOSFET in terms of avalanche and short-circuit endurance capabilities. 1. IntroductionSilicon carbide power MOSFETs are promising for high-speed and high-power applications due to their fast switching capability and low conduction power losses [1,2]. To improve the switching power loss of devices, the gate-drain capacitance (CGD) needs to be reduced during the charging and discharging of it, which can be effectively suppressed by the split-gate structure. However, split-gate MOSFETs (SG-MOSFETs) have critical problems with the gate oxide for the critical electric field appearing at the split-gate oxide corner, which may cause device failure or oxide degradation [3]. In addition to the above effects, in the split-gate structure, the specific resistance of the junction field effect transistor (JFET) region increases as the gate length decreases [1,3,4]. A novel method has been used to suppress the electric field intensity under gate oxide for the split-gate SiC MOSFETs [5,6]. However, in most articles on split gate devices, only design-level optimization is carried out to reduce the electric field at the split gate, and the dynamic and static characteristics of the device compared to traditional devices reflect the advantages of split gate devices. Analysis of device robustness is rarely seen [4,5,6,7].In this work, the
Investigation of Common-Gate and Split-Gate Structures Based
Newsletter Contact Where to Buy myInfineon Cart The Split Gate Trench MOSFET: A developmental milestone of Field Effect Transistors for the power electronics Industry The split gate trench technology offers distinct advantages over previous designs such as planar- and first gen trench MOSFETs. These advantages are: Improved RDS(on) x Active area Reduced gate-drain capacitance The split gate trench concept was introduced to address the limitations of previous MOSFET designs and provide improved performance and efficiency. Its innovative structure allows for higher doping concentrations and effectively shields the gate-drain capacitance, leading to significant improvements in device performance. The split gate trench concept has revolutionized the field of power MOSFETs MOSFET technology has been widely recognized as an excellent option for switches in power management circuits since its introduction. Commercially available since the late 1970s, vertical diffused MOSFET (VDMOS) structures were the first to fulfill the need for a power switch, as illustrated in the picture below on the left (Figure 1a). It took more than a decade of device design and process engineering progress to overcome the limitation of the high on-state resistance that restricted the current-handling capabilities of the VDMOS. This finally led to the commercialization of the first trench-gate MOSFETs (Figure 1b). By moving the channel in the vertical direction, this device concept enables a reduction in cell pitch without negatively affecting current spreading. A new era started with the introduction of charge-compensated structures, exploiting the same principle as superjunction devices. Introducing devices that use an insulated deep field plate as an extension of the gate electrode enabled the lateral depletion of the drift region in the off state (Figure 1c). As the transfer capacitance reduces abruptly when the mesa region is fully depleted, a field plate was introduced to overcome this challenge. This field plate is electrically connectedSplit-Gate: Harnessing Gate Modulation Power in Thin-Film
Hilts, and a head with teeth on both sides on the end of the hilt.Story-wise, each Boss Gate Key grants access to its local Gaia Temple via their Boss Gates. While there are seven Gaia Temples in the game, only four Boss Gate Keys are available. This is because the player automatically accesses the Gaia Temples in Eggmanland, Mazuri and Chun-nan without the need for a Boss Gate Key.In gameplay, each Boss Gate Key is split into to halves: one Sun Key and one Moon Key.[3] Both these keys are needed to form one whole Boss Gate Key. To obtain both halves for a key, the player has to clear the main daytime Act (which holds the Sun Key) and nighttime Act (which holds the Moon Key) on its continent. This means, for example, to get the Boss Gate Key for Spagonia's Boss Gate, the player must clear both the daytime and nighttime version of Rooftop Run Act 1. When playing through these Acts for the first time, the Boss Gate Key halves will serve as the Goals; after that, they will be replaced with Goal Rings. It should be noted that different continents' key halves cannot be used to substitute others. That means for example that Holoska's Sun Key cannot be used as a substitute for Spagonia's Sun Key if the player wants to form a whole Boss Gate Key.In the Wii/PlayStation 2 version of Sonic Unleashed, the Gaia Keys are replaced with the Planet Tablets.Sonic Generations[] A Boss. Brower Timing System TC-Gate (photocell gates for start, split or finish)- These Gates create an infrared beam that can start, split or stop the time. With the TC-System usersA Novel Split-Gate-Trench MOSFET Integrated With Normal Gate
Previous one. You can choose to cancel concentration voluntarily. Resting is crucial for your party's well-being and comes in two forms: Long Rest and Short Rest. To take a Long Rest, gather camp supplies, like food and scrap, which you can acquire through various means. Having enough food keeps your party fed and ready. When supplies are low, opt for a Partial Rest to regain some Hit Points and Spell Slots without using up your food. Frequently Asked Questions for Baldur's Gate 3 What platforms is Baldur's Gate 3 available on? The game is currently available on multiple platforms, including PC (Steam and GOG), PlayStation 5 and GeForce Now. Can I play Baldur's Gate 3 offline? Yes, you can play the game offline. However, certain features, such as multiplayer modes or online events, may require an internet connection. Is there a single-player campaign in Baldur's Gate 3? Absolutely! The game features an engaging single-player campaign filled with immersive storytelling and exciting missions. Experience the game's unique narrative as you embark on a solo adventure. Is there a multiplayer mode in Baldur's Gate 3? Yes, the game offers a multiplayer mode that focuses on cooperative gameplay. You can team up with your friends or other players online and embark on exciting co-op adventures, tackle challenging quests together, and strategize as a team to overcome formidable foes. Experience the game's immersive world in a collaborative multiplayer setting. Is there Cross Play in Baldur's Gate 3? As of Patch 9, Direct Connection works between Steam and GOG on PC & Mac. Will there be split-screen in Baldur's Gate 3? Split screen is available in Baldur's Gate 3 (not available in Early Access). Are there any in-game purchases in Baldur's Gate 3? No, there are no in-game purchases in our game. We believe inReliability and Breakdown Study of Erase Gate Oxide in Split-Gate
Layer melted first. After the device was impacted by a short-current test, the tolerance time of the two devices was only 2 μs apart; the SG-MOSFET did not degenerate seriously. Gate failure was found in the test waveform and the location of the damage was found by EMMI and FIB, which was consistent with the experimental phenomenon. The SiC SG-MOSFET proposed in this work improves the switching characteristics and maintains robustness, making it a promising SiC MOSFETs candidate. Author ContributionsConceptualization, H.L. and J.W.; methodology, H.L.; software, H.L. and Z.W.; validation, J.W., S.L. and L.S.; formal analysis, H.L.; investigation, H.L.; resources, J.W. and S.L; data curation, Z.W.; writing—original draft preparation, H.L.; writing—review and editing, J.W. and Z.W.; supervision, L.S. All authors have read and agreed to the published version of the manuscript.FundingThis work was supported in part by the National Natural Science Foundation of China under Grant 62004037 and Grant 62174029, in part by the Fund for Transformation of Scientific and Technological Achievements of Jiangsu Province under Grant BA2020027, in part by the Research and Development Plan of Jiangsu Province under Grant BE2022073, and in part by the Important Special Project of Nanjing City under Grant 2021-11004.Data Availability StatementNot applicable.AcknowledgmentsThe authors would like to thank SEMC for taping out and helpful discussions.Conflicts of InterestThe authors declare no conflict of interest.ReferencesYoon, J.; Na, J.; Kim, K. A 1.2 kV SiC MOSFETs with Integrated Heterojunction Diode and P-shield Region. Energies 2021, 14, 8582. [Google Scholar] [CrossRef]Kimoto, T. Material science and device physics in SiC technology for high-voltage power devices. Jpn. J. Appl. Phys. 2015, 54, 040103. [Google Scholar] [CrossRef]Agarwal, A.; Han, K.; Baliga, B.J. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs with Reduced Gate Charge. IEEE J. Electron. Devices Soc. 2020, 8, 499–504. [Google Scholar] [CrossRef]Han, K.; Baliga, B.J.; Sung, W. Split-Gate 1.2-kV 4H-SIC MOSFETs: Analysis and Experimental Validation. IEEE Electron. Device Lett. 2017, 38, 1437–1440. [Google Scholar] [CrossRef]Yu, H.; Wang, J.; Liang, S.; Deng, G.; Liu, H.; Ji, B.; Shen, Z.J. 1.2-kV silicon carbide planar split-gate MOSFET with source field plate for superior figure-of-merits. IET Power Electron. 2022, 15, 1502–1510. [Google Scholar] [CrossRef]Han, Z.; Song, G.; Bai, Y.; Chen, H.; Liu, X.; Lu, J. A novel 4H-SiC MOSFET for low switching loss and high-reliability applications. Semicond. Sci. Technol. 2020, 35, 085017. [Google Scholar] [CrossRef]Han, K.; Baliga, B.J.; Sung, W. 1.2 kV 4H-SiC Split-Gate Power MOSFETs: Analysis and Experimental Results. Mater. Sci.Split Gate Technology MOSFETs - MCC
The Boss Gate Key,[1] or just Boss Key,[2] is an object that appears in the Sonic the Hedgehog series. It is a special type of key that is needed to unlock Boss Gates.Description[]Boss Keys are fairly standard key types with designs that differ between games. However, they typically have a guard and a head at the end of the shaft that resembles the teeth of a skeleton key.In gameplay, Boss Gate Keys are used to open up for Boss Gates, thus allowing the player to fight the bosses behind them. To obtain a Boss Gate Key however, the player either has to progress with the game until a certain point, upon where the Boss Gate Key is obtained, or clear a certain number of challenges. In addition, Boss Gate Keys may be split up into parts that must be acquired and then reassembled before they can be used. In other cases, Boss Gates may might require multiple Boss Gate Keys to be unlocked, meaning the player has to collect more than one Boss Gate Key to open a Boss Gate.Game appearances[]Sonic Unleashed[] A Boss Gate Key, from the Xbox 360/PlayStation 3 version of Sonic Unleashed. The Boss Gate Keys first appeared in the Xbox 360/PlayStation 3 version of Sonic Unleashed under the name Gaia Keys (ガイア神殿の鍵 Gaia shinden no kagi?, lit. "Key to the Gaia Temple"). In this game, they resemble ancient tan and brown keys with a round guard that has horns and an eye in the middle, short. Brower Timing System TC-Gate (photocell gates for start, split or finish)- These Gates create an infrared beam that can start, split or stop the time. With the TC-System users Brower Timing System TC-Gate (photocell gates for start, split or finish). These Gates create an infrared beam that can start, split or stop the time. With Brower Timing's dedication toComments
Author / Affiliation / Email Article Menu Font Type: Arial Georgia Verdana Open AccessArticle by Hao Liu, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu and Longxing Shi * National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 211189, China * Author to whom correspondence should be addressed. Submission received: 30 April 2023 / Revised: 24 May 2023 / Accepted: 1 June 2023 / Published: 5 June 2023 Abstract: In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated with the same design rules and process platform. Therefore, the structures have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold voltage (Vth), and body diode forward voltage (VSD). It is shown that the Ciss/Coss/Crss capacitances of the SG-MOSFET can be reduced by 7%/8%/17%, respectively, compared with PG-MOSFET. It is also shown that the SG-MOSFET has the potential to reduce switching losses without compromising the static performance. Moreover, it maintains the robustness of the device, and an optimized layout design with spaced holes in the gate poly is adopted. Therefore, there is no obvious degradation between the SG-MOSFET and the PG-MOSFET in terms of avalanche and short-circuit endurance capabilities. 1. IntroductionSilicon carbide power MOSFETs are promising for high-speed and high-power applications due to their fast switching capability and low conduction power losses [1,2]. To improve the switching power loss of devices, the gate-drain capacitance (CGD) needs to be reduced during the charging and discharging of it, which can be effectively suppressed by the split-gate structure. However, split-gate MOSFETs (SG-MOSFETs) have critical problems with the gate oxide for the critical electric field appearing at the split-gate oxide corner, which may cause device failure or oxide degradation [3]. In addition to the above effects, in the split-gate structure, the specific resistance of the junction field effect transistor (JFET) region increases as the gate length decreases [1,3,4]. A novel method has been used to suppress the electric field intensity under gate oxide for the split-gate SiC MOSFETs [5,6]. However, in most articles on split gate devices, only design-level optimization is carried out to reduce the electric field at the split gate, and the dynamic and static characteristics of the device compared to traditional devices reflect the advantages of split gate devices. Analysis of device robustness is rarely seen [4,5,6,7].In this work, the
2025-04-02Newsletter Contact Where to Buy myInfineon Cart The Split Gate Trench MOSFET: A developmental milestone of Field Effect Transistors for the power electronics Industry The split gate trench technology offers distinct advantages over previous designs such as planar- and first gen trench MOSFETs. These advantages are: Improved RDS(on) x Active area Reduced gate-drain capacitance The split gate trench concept was introduced to address the limitations of previous MOSFET designs and provide improved performance and efficiency. Its innovative structure allows for higher doping concentrations and effectively shields the gate-drain capacitance, leading to significant improvements in device performance. The split gate trench concept has revolutionized the field of power MOSFETs MOSFET technology has been widely recognized as an excellent option for switches in power management circuits since its introduction. Commercially available since the late 1970s, vertical diffused MOSFET (VDMOS) structures were the first to fulfill the need for a power switch, as illustrated in the picture below on the left (Figure 1a). It took more than a decade of device design and process engineering progress to overcome the limitation of the high on-state resistance that restricted the current-handling capabilities of the VDMOS. This finally led to the commercialization of the first trench-gate MOSFETs (Figure 1b). By moving the channel in the vertical direction, this device concept enables a reduction in cell pitch without negatively affecting current spreading. A new era started with the introduction of charge-compensated structures, exploiting the same principle as superjunction devices. Introducing devices that use an insulated deep field plate as an extension of the gate electrode enabled the lateral depletion of the drift region in the off state (Figure 1c). As the transfer capacitance reduces abruptly when the mesa region is fully depleted, a field plate was introduced to overcome this challenge. This field plate is electrically connected
2025-03-27Previous one. You can choose to cancel concentration voluntarily. Resting is crucial for your party's well-being and comes in two forms: Long Rest and Short Rest. To take a Long Rest, gather camp supplies, like food and scrap, which you can acquire through various means. Having enough food keeps your party fed and ready. When supplies are low, opt for a Partial Rest to regain some Hit Points and Spell Slots without using up your food. Frequently Asked Questions for Baldur's Gate 3 What platforms is Baldur's Gate 3 available on? The game is currently available on multiple platforms, including PC (Steam and GOG), PlayStation 5 and GeForce Now. Can I play Baldur's Gate 3 offline? Yes, you can play the game offline. However, certain features, such as multiplayer modes or online events, may require an internet connection. Is there a single-player campaign in Baldur's Gate 3? Absolutely! The game features an engaging single-player campaign filled with immersive storytelling and exciting missions. Experience the game's unique narrative as you embark on a solo adventure. Is there a multiplayer mode in Baldur's Gate 3? Yes, the game offers a multiplayer mode that focuses on cooperative gameplay. You can team up with your friends or other players online and embark on exciting co-op adventures, tackle challenging quests together, and strategize as a team to overcome formidable foes. Experience the game's immersive world in a collaborative multiplayer setting. Is there Cross Play in Baldur's Gate 3? As of Patch 9, Direct Connection works between Steam and GOG on PC & Mac. Will there be split-screen in Baldur's Gate 3? Split screen is available in Baldur's Gate 3 (not available in Early Access). Are there any in-game purchases in Baldur's Gate 3? No, there are no in-game purchases in our game. We believe in
2025-04-16Layer melted first. After the device was impacted by a short-current test, the tolerance time of the two devices was only 2 μs apart; the SG-MOSFET did not degenerate seriously. Gate failure was found in the test waveform and the location of the damage was found by EMMI and FIB, which was consistent with the experimental phenomenon. The SiC SG-MOSFET proposed in this work improves the switching characteristics and maintains robustness, making it a promising SiC MOSFETs candidate. Author ContributionsConceptualization, H.L. and J.W.; methodology, H.L.; software, H.L. and Z.W.; validation, J.W., S.L. and L.S.; formal analysis, H.L.; investigation, H.L.; resources, J.W. and S.L; data curation, Z.W.; writing—original draft preparation, H.L.; writing—review and editing, J.W. and Z.W.; supervision, L.S. All authors have read and agreed to the published version of the manuscript.FundingThis work was supported in part by the National Natural Science Foundation of China under Grant 62004037 and Grant 62174029, in part by the Fund for Transformation of Scientific and Technological Achievements of Jiangsu Province under Grant BA2020027, in part by the Research and Development Plan of Jiangsu Province under Grant BE2022073, and in part by the Important Special Project of Nanjing City under Grant 2021-11004.Data Availability StatementNot applicable.AcknowledgmentsThe authors would like to thank SEMC for taping out and helpful discussions.Conflicts of InterestThe authors declare no conflict of interest.ReferencesYoon, J.; Na, J.; Kim, K. A 1.2 kV SiC MOSFETs with Integrated Heterojunction Diode and P-shield Region. Energies 2021, 14, 8582. [Google Scholar] [CrossRef]Kimoto, T. Material science and device physics in SiC technology for high-voltage power devices. Jpn. J. Appl. Phys. 2015, 54, 040103. [Google Scholar] [CrossRef]Agarwal, A.; Han, K.; Baliga, B.J. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs with Reduced Gate Charge. IEEE J. Electron. Devices Soc. 2020, 8, 499–504. [Google Scholar] [CrossRef]Han, K.; Baliga, B.J.; Sung, W. Split-Gate 1.2-kV 4H-SIC MOSFETs: Analysis and Experimental Validation. IEEE Electron. Device Lett. 2017, 38, 1437–1440. [Google Scholar] [CrossRef]Yu, H.; Wang, J.; Liang, S.; Deng, G.; Liu, H.; Ji, B.; Shen, Z.J. 1.2-kV silicon carbide planar split-gate MOSFET with source field plate for superior figure-of-merits. IET Power Electron. 2022, 15, 1502–1510. [Google Scholar] [CrossRef]Han, Z.; Song, G.; Bai, Y.; Chen, H.; Liu, X.; Lu, J. A novel 4H-SiC MOSFET for low switching loss and high-reliability applications. Semicond. Sci. Technol. 2020, 35, 085017. [Google Scholar] [CrossRef]Han, K.; Baliga, B.J.; Sung, W. 1.2 kV 4H-SiC Split-Gate Power MOSFETs: Analysis and Experimental Results. Mater. Sci.
2025-04-08Them all down. Professional bowlers and coaches recommend aiming for the left side of the 4 pin and hoping for a lucky bounce to take out the 7-9-10. I guess we can attribute the 0.3% success rate to luck then.2 | 4-6-7Success rate: 0.6 percent.The 4-6-7 split is considered one of the more difficult splits to convert. It is a challenging spare to pick up as it involves knocking down the pins located on the left and right sides of the lane, with a gap of one pin in between, while leaving the back row of pins standing.With that success rate, hope. Use hope and luck as part of your strategy to convert.3 | 7-10Success rate: 0.7 percent.This split is most commonly known as “goalposts” (if you love soccer) and “bedposts” if you like all things happening in bed.The position of the pins is probably enough to make you want to give up trying.4 | 4-6-10Success rate: 0.8 percent.This is just similar to the 4-6-7 split, but it’s interesting to know that 4-6-10 split is not as hard as the former. The next time your opponent has that split, tell him you have a 0.2 percent better chance of converting.5 | 3-7-9Success rate: 0.8 percent.To convert this, you need a lot of power on your bowling ball to create a lot of bounces for the pins when they get hit. This gives you a lot of chances or luck to take down all three of them.6 | 4-6-7-10Success rate: 1 percent.The 4-6-7-10 split is also known as “Big Four”, the “Golden Gate split”, “Big ears”, or “Grandma’s teeth”. I’ll probably call it the Golden Gate split if I convert all of them. Otherwise, it’s any of those names.At 1%, this is one of the hardest bowling splits many pros get
2025-04-23A.; Romano, G.; Riccio, M.; Irace, A.; Urresti, J.; Wright, N. Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Sapporo, Japan, 28 May–1 June 2017; pp. 391–394. [Google Scholar] Figure 1. The cross-sectional schematic views of (a) the PG-MOSFET, (b) SG-MOSFET, and (c) SEM view of the SG-MOSFET. Figure 1. The cross-sectional schematic views of (a) the PG-MOSFET, (b) SG-MOSFET, and (c) SEM view of the SG-MOSFET. Figure 2. Measured (a) forward blocking behaviors, (b) Vth curves, (c) Id-Vd characteristics with VGS from 5 V/10 V/15 V/20 V, and (d) body diode conduction characteristics with VGS = −4 V of the fabricated PG-MOSFET and SG-MOSFET. Figure 2. Measured (a) forward blocking behaviors, (b) Vth curves, (c) Id-Vd characteristics with VGS from 5 V/10 V/15 V/20 V, and (d) body diode conduction characteristics with VGS = −4 V of the fabricated PG-MOSFET and SG-MOSFET. Figure 3. Measured three capacitances of the fabricated PG-MOSFET and SG-MOSFET (VDS = 0–800 V). Figure 3. Measured three capacitances of the fabricated PG-MOSFET and SG-MOSFET (VDS = 0–800 V). Figure 4. Measured gate charge of the fabricated SG-MOSFET and PG-MOSFET at VDS = 800 V and ID = 20 A. The SG-MOSFET clearly shows the smaller plateau (QGD). Figure 4. Measured gate charge of the fabricated SG-MOSFET and PG-MOSFET at VDS = 800 V and ID = 20 A. The SG-MOSFET clearly shows the smaller plateau (QGD). Figure 5. Schematic of UIS measurement test circuit. Figure 5. Schematic of UIS measurement test circuit. Figure 6. Measured UIS waveforms of (a) the PG- MOSFET and (b) the SG-MOSFET, just before failure and when failure occurred: VGS = +20/−5 V [17]. Figure 6. Measured UIS waveforms of (a) the PG- MOSFET and (b) the SG-MOSFET, just before failure and when failure occurred: VGS = +20/−5 V [17]. Figure 7. Post-failure chip surface after UIS failure at VGS = +20 V/−5 V: (a) the discontinuous digging structure split gate MOSFET; (b) the conventional planar gate MOSFET. Figure 7. Post-failure chip surface after UIS failure at VGS = +20 V/−5 V: (a) the discontinuous digging structure split gate MOSFET; (b) the conventional planar gate MOSFET. Figure 8. Simulation of the UIS process of the internal lattice temperature: (a) SG-MOSFET and (b) PG-MOSFET. Figure 8. Simulation of the UIS process of the internal lattice temperature:
2025-04-16