Drag gan

DragGAN (SIGGRAPH'2023)Drag Your GAN: Interactive Point-based Manipulation on the Generative Image ManifoldTask: DragGANAbstractSynthesizing visual content that meets users’ needs often requires flexibleand precise controllability of the pose, shape, expression, and layout of thegenerated objects. Existing approaches gain controllability of generativeadversarial networks (GANs) via manually annotated training data or aprior 3D model, which often lack flexibility, precision, and generality. Inthis work, we study a powerful yet much less explored way of controllingGANs, that is, to "drag" any points of the image to precisely reach targetpoints in a user-interactive manner, as shown in Fig.1. To achieve this, wepropose DragGAN, which consists of two main components: 1) a feature-based motion supervision that drives the handle point to move towardsthe target position, and 2) a new point tracking approach that leveragesthe discriminative generator features to keep localizing the position of thehandle points. Through DragGAN, anyone can deform an image with precisecontrol over where pixels go, thus manipulating the pose, shape, expression,and layout of diverse categories such as animals, cars, humans, landscapes,etc. As these manipulations are performed on the learned generative imagemanifold of a GAN, they tend to produce realistic outputs even for challenging scenarios such as hallucinating occluded content and deformingshapes that consistently follow the object’s rigidity. Both qualitative andquantitative comparisons demonstrate the advantage of DragGAN over priorapproaches in the tasks of image manipulation and point tracking. We alsoshowcase the manipulation of real images through GAN inversion.Results and Models Gradio Demo of DragGAN StyleGAN2-elephants-512 by MMagic ModelDatasetCommentFID50kPrecision50kRecall50kDownloadstylegan2_lion_512x512Internet Lionsself-distilled StyleGAN0.00.00.0modelstylegan2_elphants_512x512Internet Elephantsself-distilled StyleGAN0.00.00.0modelstylegan2_cats_512x512Cat AFHQself-distilled StyleGAN0.00.00.0modelstylegan2_face_512x512FFHQself-distilled StyleGAN0.00.00.0modelstylegan2_horse_256x256LSUN-Horseself-distilled

Depletion region in the GaN epitaxial layer, effectively depleting the 2DEG. As Vgs increases, the 2DEG beneath the gate gradually recovers, enabling a higher IDS current to flow through the channel. The threshold voltage (Vth) is defined as the Vgs value at which IDS reaches a specified level.Figure 3: Structure of an InnoGaN™ E-Mode GaN HEMT (Source: Innoscience)ROHM SemiconductorROHM offers a range of GaN-based products under the EcoGaN™ brand, designed to optimize performance for lower power consumption, more compact peripheral components, and simplified circuit designs with fewer parts. The EcoGaN™ lineup includes both GaN HEMT devices and GaN-integrated ICs with built-in controllers.A key challenge in the widespread adoption of GaN technology is ensuring the reliability of GaN HEMTs, with the growth of the GaN epitaxial layer playing a crucial role in GaN-on-Si manufacturing. ROHM has been actively developing GaN technology since 2006, leveraging its proprietary expertise in GaN epitaxial layer growth—originally refined for high-reliability LED production—to deliver robust and dependable products.In April 2023, ROHM commenced production of 650V GaN HEMTs, covering a key voltage range in the GaN market. Beyond enhancing GaN HEMT performance, ROHM is also advancing solutions for GaN drive and control, including gate driver and controller ICs. These innovations enable higher switching speeds while minimizing losses, offering user-friendly GaN solutions for more efficient power applications.Key parameters for evaluating GaN power devicesWhen evaluating or selecting a GaN power device, several critical parameters should be considered:VDS,max (drain-source voltage): It is the maximum voltage the device is guaranteed to block

Deliver higher efficiency, faster switching speeds, and reduced power losses, GaN-based power semiconductors offer significant advantages over traditional silicon-based devices. Their superior electrical properties make these devices highly attractive for applications in consumer electronics, data centers, automotive, renewable energy, RF, and even space systems.Several leading semiconductor manufacturers have developed GaN-based power solutions, each with distinct innovations and approaches to enhance performance and adoption. This article provides an overview of GaN technologies from EPC, Infineon Technologies, Navitas Semiconductor, Innoscience, and ROHM, along with key evaluation parameters and commercially available products.Purpose and scopeThe purpose of this article is to examine the GaN technology landscape by reviewing the solutions offered by five key manufacturers. Each manufacturer has developed GaN-based products with unique architectures, integration levels, and application focuses. This article details the fundamental characteristics of their GaN power devices and provides a comparative analysis of essential parameters to consider when evaluating these components. Additionally, a selection of commercially available devices from each manufacturer is highlighted.Efficient Power Conversion (EPC)Founded in 2007, EPC focuses on advancing power electronics by developing and commercializing GaN-based power devices. EPC is a pioneer in GaN technology, focusing on enhancement-mode GaN (eGaN) FETs and integrated circuits. Their GaN devices are widely used in applications requiring high-speed switching, including DC-DC converters, lidar systems, and Class-D audio amplifiers. 03.21.2025 03.19.2025 03.17.2025 EPC’s proprietary GaN-on-silicon technology delivers superior performance by reducing gate charge, output capacitance, and conduction losses. Their chip-scale packaging (CSP) approach minimizes parasitics, enhancing efficiency and thermal performance.A cross-section of EPC’s

Upon reasonable request.ReferencesChen, K.J., et al.: GaN-on-Si power technology: devices and applications. IEEE Trans. Electron Devices 64, 779–795 (2017)Article Google Scholar Dang, K., et al.: A 58-GHz high-power and high-efficiency rectifier circuit with lateral GaN Schottky diode for wireless power transfer. IEEE Trans. Power Electron. 35, 2247–2252 (2020)Article Google Scholar Aklimi, E., et al.: Hybrid CMOS/GaN 40-MHz maximum 20-V input DC–DC multiphase buck converter. IEEE Trans. Power Electron. 52, 1618–1627 (2017) Google Scholar Jones, E.A., et al.: Review of commercial GaN power devices and GaN-based converter design challenges. IEEE J. Emerg. Sel. Top. Power Electron. 4, 707–719 (2016)Article Google Scholar Weiss, B., et al.: Monolithically-integrated multilevel inverter on lateral GaN-on-Si technology for high-voltage applications. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).1–4 (2015)Li, X., et al.: 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration. IEEE Electron Device Lett. 38, 918–921 (2017)Article Google Scholar Wang, B., et al.: Integrated circuit implementation for a GaN HFET driver circuit. IEEE Trans. Ind. Appl. 46, 2056–2067 (2010)Article Google Scholar Bergveld, H.J., et al.: Integration trends in monolithic power ICs: application and technology challenges. 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. 51, 1965–1974 (2016)Disney, D., et al.: High-voltage integrated circuits: history, state of the art, and future prospects. IEEE Trans. Electron Devices 64, 659–673 (2017)Article Google Scholar Li, X., et al.: Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates. IEEE Electron Device Lett. 40, 1499–1502 (2019)Article Google Scholar Reusch, D., et al.: Improving high frequency DC-DC converter performance with monolithic half bridge GaN ICs. IEEE Energy Conversion Congress and Exposition. 381–387 (2015)Jiang, Q., et al.: Substrate-coupled cross-talk effects on an AlGaN/GaN-on-Si smart power-IC platform. IEEE Trans. Electron Devices 61, 3808–3813 (2014)Article Google Scholar Tsai, C., et al.: Smart GaN platform: performance

Switch. This design is supported by custom gate driver ICs incorporating a unique differential gate-drive concept.Navitas SemiconductorNavitas Semiconductor is a key innovator in GaN power ICs, integrating GaN power FETs with drive, control, and protection circuitry in a single monolithic chip. Their GaNFast™ technology enables ultra-high switching frequencies, reducing component count and enhancing power density in applications like fast chargers, consumer electronics, and renewable energy. By embedding drive and control functions, Navitas eliminates the need for external gate drivers, improving efficiency and reliability.Navitas’ AllGaN™ process, based on 650V E-Mode GaN-on-Si technology, integrates GaN FETs, drivers, logic, and protection into a single chip. These monolithic GaN power ICs are available in compact, low-cost QFN packages (5×6 mm or 6×8 mm) for AC and high-voltage DC applications.Offered in both single and half-bridge configurations, these GaN power ICs support a wide range of applications, from mobile fast chargers to data centers, renewable energy, and electric vehicles. Half-bridge circuits are fundamental in power electronics, enabling high-frequency operation that reduces size, cost, and weight while improving efficiency.InnoscienceInnoscience, a leading Integrated Device Manufacturer (IDM) specializing in GaN technology, provides a diverse portfolio of GaN-on-Si power devices. Its InnoGaN™ series of discrete components caters to a broad range of applications, spanning low voltage (30V-40V), medium voltage (80V-150V), and high voltage (650V-700V) requirements.Innoscience’s InnoGaN™ devices are discrete enhancement-mode (E-Mode) GaN HEMTs that require a positive Vgs voltage for gate operation. InnoGaN structure (Figure 3) incorporates a pGaN layer beneath the gate of the GaN HEMT, which induces a

& challenges. 2017 IEEE International Electron Devices Meeting (IEDM). 3311–3314 (2017)Tang, G., et al.: High-speed, high-reliability GaN power device with integrated gate driver. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 76–79 (2018)Xu, H., et al.: Integrated high-speed over-current protection circuit for GaN power transistors. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). 275–278 (2019)Sanghoon, K., et al.: Linearity analysis of CMOS for RF application. IEEE Trans. Microw. Theory Tech.Microw. Theory Tech. 51, 972–977 (2003)Article Google Scholar Chowdhury, N., et al.: Regrowth-free GaN-based complementary logic on a Si substrate. IEEE Electron Device Lett. 41, 820–823 (2020)Article Google Scholar Rongming, C., et al.: An Experimental demonstration of GaN CMOS technology. IEEE Electron Device Lett. 37, 269–271 (2016)Article Google Scholar Hahn, H., et al.: First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors. 72nd Device Research Conference. 259–260 (2014)Chowdhury, N., et al.: Performance estimation of GaN CMOS technology. 2021 Device Research Conference (DRC). 1–2 (2021)Zheng, Z., et al.: Galium nitride-based complementary logic integrated circuits. Nat. Electron. 4, 696–603 (2021)Article Google Scholar Tang, G., et al.: Digital integrated circuits on an E-mode GaN power HEMT platform. IEEE Electron Device Lett. 38, 1282–1285 (2017)Article Google Scholar Dang, K., et al.: Lateral GaN Schottky barrier diode for wireless high-power transfer application with high RF/DC conversion efficiency: from circuit construction and device technologies to system demonstration. IEEE Trans. Industr. Electron.Industr. Electron. 67, 6597–6606 (2020)Article Google Scholar Nakajima, A., et al.: Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface. Appl. Phys. Express 6, 1–4 (2013)Article Google Scholar Nakajima, A., et al.: Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures. J. Appl. Phys. 115, 1–7 (2014)Article Google Scholar Zheng, Z., et al.: Monolithically integrated GaN ring oscillator based on high-performance complementary logic